central semiconductor corp. tm process CP667 small signal transistor pnp- saturated switch transistor chip princip al device types 2n3467 2n3468 geometry process details backside collector r1 (1-august 2002) process epitaxial planar die size 31 x 31 mils die thickness 9.0 mils base bonding pad area 5.9 x 11.8 mils emitter bonding pad area 6.5 x 13.8 mils top side metalization al - 30,000 ? back side metalization au - 15,000? 145 adams avenue hauppauge, ny 11788 usa tel: (631) 435-1110 fax: (631) 435-1824 www.centralsemi.com gross die per 4 inch w afer 11,300
central semiconductor corp. tm process CP667 typical electrical characteristics 145 adams avenue hauppauge, ny 11788 usa tel: (631) 435-1110 fax: (631) 435-1824 www.centralsemi.com r1 (1-august 2002)
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